High temperature study of flexible silicon-on-insulator fin field-effect transistors

Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors

The breathtaking increase of the performance of integrated circuits was made possible by the continuing size miniaturization of semiconductor devices’ feature size. The 32nm MOSFET process technology [1] presently in manufacturing involves a sophisticated heavily strained silicon channel and a high-k dielectric/metal gate stack. Although alternative channel materials with a mobility higher than...

Vertical High-Voltage Transistors on Thick Silicon-on-Insulator

Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors

Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22033, Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, School of Physics, Astronomy, and Computational Sciences, George Mason University, Fairfax, VA 22033, Materials Science and Engineering Division, National Institute of Standards an...

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used a...

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

In this article we give an overview over the physical mechanisms involved in the electronic transport in ultrathinbody SOI Schottky-barrier MOSFETs. A strong impact of the SOI and gate oxide thickness on the transistor characteristics is found and explained using experimental as well as simulated data. We elaborate on the influence of scattering in the channel and show that for a significant ba...